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| SPICE MODELS: MIMD10A MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Features NEW PRODUCT * * * * * * * * * * * * * * Epitaxial Planar Die Construction Built-In Biasing Resistors One 500mA PNP and One 100mA NPN Lead Free/RoHS Compliant (Note 1) E2 C2 A B1 E1 SOT-363 Dim BC Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 A B C D F M Mechanical Data Case: SOT-363 Case material - Molded PLastic. UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Finish - Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Code: C73 (See Page 2) Ordering & Date Code: See Page 2 Terminal Connections: See Diagram Weight: 0.015 grams (approx.) J K B2 C1 G H 0.65 Nominal H J K L M a D F L All Dimensions in mm Tr2 R1 R 2 R1 Tr1 P/N MIMD10A Tr1 Tr2 R1 0.1K 10K R2 10K SCHEMATIC DIAGRAM Maximum Ratings PNP Section Tr1 Characteristic Supply Voltage Input Voltage Output Current @ TA = 25C unless otherwise specified Symbol VCC VIN IO Value -50 -5 to +5 -500 Unit V V mA Maximum Ratings NPN Section Tr2 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Value 50 50 5 100 Unit V V V mA Maximum Ratings - Total Characteristic Power Dissipation (Note 2) @ TA = 25C unless otherwise specified Symbol Pd Tj, TSTG Value 200 -55 to +150 Unit mW C Operating and Storage Temperature Range Note: 1. No purposefully added lead. 2. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. DS30381 Rev. 6 - 2 1 of 4 www.diodes.com MIMD10A a Diodes Incorporated Electrical Characteristics PNP Section Tr1 @ TA = 25C unless otherwise specified Min -0.3 3/4 3/4 3/4 3/4 68 3/4 Typ 3/4 3/4 -0.1 3/4 3/4 3/4 200 Max 3/4 -1.5 -0.3 -25 -0.5 3/4 3/4 Unit V V mA mA 3/4 MHz Test Condition VCC = -5V, IO = -100mA VO = 0.3, IO = -100mA IO = -100mA/-5mA VI = -2V VCC = -50V, VI = 0V 3/4 VCE = -10V, IE = -50mA, f = 100MHz NEW PRODUCT Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product* * Transistor - For Reference Only Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Electrical Characteristics NPN Section Tr2 Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Gain-Bandwidth Product* * Transistor - For Reference Only Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Min 50 50 5 3/4 3/4 3/4 100 3/4 @ TA = 25C unless otherwise specified Typ 3/4 3/4 3/4 3/4 3/4 3/4 250 250 Max 3/4 3/4 3/4 0.5 0.5 0.3 600 3/4 Unit V V V mA mA V 3/4 MHz Test Condition IC = 50mA IC = 1mA IE = 50mA VCB = 50V VEB = 4V IC/IB = 10mA / 1.0mA IC = 1mA, VCE = 5V VCE = 10V, IE = -5mA, f = 100MHz Ordering Information Device MIMD10A-7-F (Note 3) Packaging SOT-363 Shipping 3000/Tape & Reel Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code Month Code Jan 1 2003 P Feb 2 2004 R March 3 2005 S Apr 4 May 5 2006 T Jun 6 2007 U Jul 7 2008 V Aug 8 2009 W Sep 9 Oct O 2010 X Nov N 2011 Y Dec D DS30381 Rev. 6 - 2 2 of 4 www.diodes.com YM C73 C73 = Product Type Marking Code YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September MIMD10A TYPICAL CURVES - Tr2 NEW PRODUCT VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V) 250 1 IC/IB = 10 PD, POWER DISSIPATION (MILLIWATTS) (TOTAL PACKAGE) 200 0.1 150 75 C -25 C 25 C 100 0.01 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE ( C) Fig. 1 Derating Curve 0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 2 VCE(SAT) vs. IC 1000 hFE, DC CURRENT GAIN (NORMALIZED) 75 C VCE = 10 4 IE = 0mA COB, CAPACITANCE (pF) -25 C 100 25 C 3 2 10 1 0 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain 100 0 5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (V) Fig. 4 Output Capacitance 10 VO = 0.2 100 75C IC, COLLECTOR CURRENT (mA) 25C 10 Vin, INPUT VOLTAGE (V) -25C 1 -25C 75 C 25C 1 0.1 0.01 0.001 0 1 2 3 4 5 6 7 8 9 10 1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current Vin, INPUT VOLTAGE (V) Fig. 5 Collector Current Vs. Input Voltage DS30381 Rev. 6 - 2 3 of 4 www.diodes.com MIMD10A IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30381 Rev. 6 - 2 4 of 4 www.diodes.com MIMD10A |
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